In this work, the structural properties of the zinc sulfide (ZnS) films have been investigated using X-ray diffraction (XRD) analysis which show an enhancement in the crystallite degree after doping with copper (Cu). Good matching between the ZnS and porous silicon (PS) structure was noted from the atomic force microscope (AFM) results. The reflectivity gave a clear observation of anti-reflected coating improvement for PS layer and more enhancements after the ZnS deposition. The optical properties show a blue shift in the bandgap for the ZnS deposited with higher substrate temperature and a red shift after doped with different elements. For ZnS/PS heterojunction, the electrical resistivity has been increased after PS layer formed and changed with the variation of the pore size and it was much higher after ZnS deposited on the PS. However, use of ZnS:Cu/PS photodetector showed much higher output current at the ultraviolet (UV) region compared to ZnS/PS. The ZnS:Cu/PS photodetector showed higher output current value than that of the ZnS/PS leading to improvement in the quantum efficiency of 42%.
Keywords:
ZnS; thin films; doping; porous silicon; photodetectors
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